Mitsubishi Electric US and NextGen RF Release Second Design Kit to Simplify Design Process of UHF Band Amplifiers using Mitsubishi’s SiRF Devices
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Mitsubishi Electric US and NextGen RF Release Second Design Kit to Simplify Design Process of UHF Band Amplifiers using Mitsubishi’s SiRF Devices

One-Watt Evaluation Kit and Reference Design Package Helps Speed Design Cycle Times

CYPRESS, Calif. — (BUSINESS WIRE) — September 20, 2016 — Mitsubishi Electric US, Inc. and NextGen RF Design, Inc. have collaborated again to help accelerate the design of UHF band power amplifiers, with the introduction of the RD01 evaluation kit and associated reference design package. NextGen RF developed the product specifically for Mitsubishi Electric’s RD01MUS2B silicon RF (SiRF) transistor (RD01). This RoHS-compliant one-watt MOSFET transistor is often used in low-power radios, or as a driver stage in higher power RF amplifiers. The RD01 reference design kit can be used as a single-stage evaluation board or, when paired with the previously released RD07 reference design kit, as a two-stage amplifier providing more than seven watts of output power.

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Like the RD07 version released earlier this year, the RD01 reference design kit includes an evaluation board tuned for the 400-470 MHz band together with the evaluation board schematics, PCB layout files, bill-of-materials, a detailed application note and RF characteristics report.

“The RD01 reference design kit is another step in our continuing effort to simplify the design process and reduce design cycle times using Mitsubishi Electric’s family of SiRF devices,” said Kyle Martin, vice president and general manager, Mitsubishi Electric US, Inc. Semiconductor Division. “RF Design engineers can readily integrate our parts along with all the surrounding bias and matching circuits by leveraging the schematics, layout files and bill of materials (BOM) supplied with the reference design.”

“We’re pleased to be working with Mitsubishi Electric US on the development of reference designs and application notes for Mitsubishi Electric’s RF MOSFET power transistors,” said David Mitchell, president, NextGen RF Design, Inc. “The evaluation board included in the RD01 reference design kit highlights the high gain and efficiency of the RD01MUS2B in the 400-470MHz frequency band. Together with the application note, design files and characterization data, the kit provides the RF engineer a great toolset to accelerate the design process using the RD01MUS2B in their product.”

Mitsubishi Electric’s full line-up of SiRF devices, with output power ranging from 0.5W to 100W, support many end applications in the land mobile radio (LMR) space, including mission-critical radios for police, fire and other first responders, as well as a wide variety of commercial radios and RF amplifiers for use in the transportation, marine, energy, and medical industries.

Information on the RD01 reference design kit (item number RDK-RD01MUS-4047-A), as well as the RD07 reference design kit (RDK-RD07MUS-4047-A), is available by contacting Mitsubishi Electric US Semiconductor Division at 714-252-7847 or SiRFBoardSupport@meus.mea.com. Both products are available for $249.00/each plus applicable taxes.

About NextGen RF Design, Inc.

NextGen RF Design was founded in 2008 as a collaboration of product design experts. The company specializes in providing wireless design expertise on a variety of products, ranging from design consultation to turnkey product development. NextGen RF is based in Waseca, Minnesota.

About Mitsubishi Electric US Semiconductor Division

Mitsubishi Electric US, Inc.’s Semiconductor Division presents a portfolio of semiconductor and electronic devices that helps advance information processing and telecommunications. The division offers next-generation optical devices that support today's rapidly evolving optical telecommunications networks. They include high-frequency gallium nitride, gallium arsenide and silicon RF devices used in a variety of applications from two-way radios to telecommunications satellites. The division also provides leading-edge color TFT-LCD modules designed for high reliability and superior visibility. Mitsubishi Electric’s TFT-LCD modules deliver exceptional performance and excellent color quality in a broad range of indoor and outdoor operating environments. They can be used in such industrial applications as medical, factory automation, agriculture, construction, marine, and aviation. Most recently, the division added contact image sensors for machine vision applications to its product line. Additional information is available at http://www.mitsubishielectric-usa.com/semiconductors/

In addition to semiconductor devices, Mitsubishi Electric US group companies’ principal businesses include factory automation equipment, automotive electrical components, elevators and escalators, heating and cooling products, solar modules, electric utility products, and large-scale video displays for stadiums and arenas. Mitsubishi Electric US group companies have roughly 50 locations throughout North America with approximately 4,000 employees.



Contact:

Mitsubishi Electric US, Inc.
Mark Tykal
Central Area Sales Manager
Semiconductor Division
Office: 630-485-6461
Cell: 630-465-4200
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