(Note 6) TFT (thin-film transistor):
A transistor formed from
thin-film polysilicon. Use of TFTs formed in the upper layer of MOS
transistors on the silicon substrate as the SRAM load transistor is an
effective method for reducing the memory cell area.
(Note 7) Full CMOS type:
An SRAM memory cell structure that has a
total of 6 transistors, consisting of p-channel MOS and n-channel MOS
transistors on the same silicon substrate surface. This memory cell has
a large area and also has a risk of latch-up.
Pricing and Availability
Samples of Renesas Electronics' new SRAMs will be available in December 2014, priced at US$11.0. Mass production is scheduled to begin in January 2015. (Pricing and availability are subject to change without notice.)
(Remarks) All registered trademarks or trademarks are the property of their respective owners.
About Renesas Electronics Corporation
Renesas Electronics Corporation (TSE: 6723), the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad-range of analog and power devices. Business operations began as Renesas Electronics in April 2010 through the integration of NEC Electronics Corporation (TSE:6723) and Renesas Technology Corp., with operations spanning research, development, design and manufacturing for a wide range of applications. Headquartered in Japan, Renesas Electronics has subsidiaries in 20 countries worldwide. More information can be found at www.renesas.com.
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Product Specifications of the RMLV0816B and RMLV0808B Series of |
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SRAM (8 Mbit, 110 nm Process) |
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| Part Number |
Word
Organization |
Package |
Supply
Voltage |
Access
Time |
Pin
Type |
Standby
Current |
Sample
Pricing |
Availability | ||||||||
| RMLV0816BGSB-4S2 | x16 | TSOPⅡ(44) | 2.7 V-3.6 V | 45 ns | CS1 |
Up to 25℃: 2 μA (max.)
Up to 40℃: 4 μA (max.) Up to 70℃: 7 μA (max.) Up to 85℃: 10 μA (max.) |
US$11 |
April 2015 |
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| 2.4 V-2.7 V | 55 ns | |||||||||||||||
| RMLV0816BGSA-4S2 | TSOP�nbsp;(48) | 2.7 V-3.6 V | 45 ns | CS2 | April 2015 | |||||||||||
| 2.4 V-2.7 V | 55 ns | |||||||||||||||
| RMLV0816BGBG-4S2 | FBGA(48) | 2.7 V-3.6 V | 45 ns | CS2 | December 2014 | |||||||||||
| 2.4 V-2.7 V | 55 ns | |||||||||||||||
| RMLV0816BGSD-4S2 | μTSOPⅡ(52) | 2.7 V-3.6 V | 45 ns | CS2 | April 2015 | |||||||||||
| 2.4 V-2.7 V | 55 ns | |||||||||||||||
| RMLV0808BGSB-4S2 | x8 | TSOPⅡ(44) | 2.7 V-3.6 V | 45 ns | CS2 | April 2015 | ||||||||||
| 2.4 V-2.7 V | 55 ns | |||||||||||||||
