Institute to host annual Leti Devices Workshop on Dec. 10: ‘Semiconductor Devices: Moving Towards Efficiency & Sustainability’

GRENOBLE, France – Nov. 10, 2023 – CEA-Leti papers at IEDM 2023, Dec. 9-13, in San Francisco, will present results in multiple fields, including ultimate 3D advances in radio frequency, such as performance improvement at cryogenic temperature.

The institute will present nine papers during the conference this year.  Two presentations will highlight a breakthrough in 3D sequential integration and results pushing GaN/Si HEMT closer to GaN/SiC performance at 28 GHz:

• “3D Sequential Integration with Si CMOS Stacked on 28nm Industrial FDSOI with Cu-ULK iBEOL Featuring RO and HDR Pixel”, reports the world-first 3D sequential integration of CMOS over CMOS with advanced metal line levels, which brings 3DSI with intermediate BEOL closer to commercialization.
• "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts" reports development of CMOS compatible 200mm SiN/AlN/GaN MIS-HEMT on silicon substrate that brings GaN/Si high electron mobility transistors (HEMT) closer to GaN/SiC performance at 28 GHz in power density. It also highlights that SiN/AlN/GaN on silicon metal-insulated semiconductor (MIS-HEMT) is a potential candidate for high power Ka-band power amplifiers.

Leti Devices Workshop

“Semiconductor Devices: Moving Towards Efficiency & Sustainability”

Dec. 10 @ 5:30 pm, Nikko Hotel, 222 Mason Street, Third Floor

The workshop will present CEA-Leti experts’ visions for and key results in efficient computing and radiofrequency devices for More than Moore applications.

CEA-Leti Presentations

Radio Frequency

• RF: "A Cost Effective RF-SOI Drain Extended MOS Transistor Featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier Application", by Xavier Garros
  • Session 34.2: Wednesday, Dec. 13 @ 9:30 am (Continental 7-9)

• RF crypto: "RF Performance Enhancement of 28nm FD-SOI Transistors Down to Cryogenic Temperature Using Back Biasing", by Quentin Berlingard
  • Session 34.3: Wednesday, Dec. 13 @ 9:55 am (Continental 7-9)

• GaN RF: "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts", by Erwan Morvan
  • Session 38.3: Wednesday, Dec. 13 @ 2:25 pm (Continental 4)

3D Sequential Stacking

• “Ultimate Layer Stacking Technology for High Density Sequential 3D Integration”, a collaborative paper with Ionut Rad of Soitec
  • Session 19.5:  Tuesday, Dec. 12 @ 4:00 pm (Grand Ballroom A)
• “3D Sequential Integration with Si CMOS Stacked on 28nm Industrial FDSOI with Cu-ULK iBEOL Featuring RO and HDR Pixel”, by Perrine Batude
  • Session 29.3: Wednesday, Dec. 13 @ 9:55 am (Grand Ballroom B)

Emerging Device and Compute Technology (EDT)

• “Designing Networks of Resistively-Coupled Stochastic Magnetic Tunnel Junctions for Energy-Based Optimum Search”, by Kamal Danouchi
  • Session 22.3: Tuesday, Dec. 12 @ 3:10 (Continental 5)

Neuromorphic Computing

• Hybrid FeRAM/RRAM Synaptic Circuit Enabling On-Chip Inference and Learning at the Edge”, by Michele Martemucci (LIST)
  • Session 23:3: Tuesday, Dec. 12 @ 3:10 (Continental 6)

• “Bayesian In-Memory Computing with Resistive Memories”, a collaborative paper with Damien Querlioz of CNRS-C2N
  • Session 12:3: Tuesday, Dec. 12 @ 9:55 am (Continental 1-3)

Quantum Technology

• “Tunnel and Capacitive Coupling Optimization in FDSOI Spin-Qubit Devices”, by H. Niebojewski and B. Bertrand
  • Session 22:6: Tuesday, Dec. 12 @ 4:25 pm (Continental 5)

About CEA-Leti (France)

CEA-Leti, a technology research institute at CEA, is a global leader in miniaturization technologies enabling smart, energy-efficient and secure solutions for industry. Founded in 1967, CEA-Leti pioneers micro-& nanotechnologies, tailoring differentiating applicative solutions for global companies, SMEs and startups. CEA-Leti tackles critical challenges in healthcare, energy and digital migration. From sensors to data processing and computing solutions, CEA-Leti’s multidisciplinary teams deliver solid expertise, leveraging world-class pre-industrialization facilities. With a staff of more than 2,000 talents, a portfolio of 3,200 patents, 11,000 sq. meters of cleanroom space and a clear IP policy, the institute is based in Grenoble, France, and has offices in Silicon Valley, Brussels and Tokyo. CEA-Leti has launched 75 startups and is a member of the Carnot Institutes network. Follow us on www.leti-cea.com and @CEA_Leti.

Technological expertise

CEA has a key role in transferring scientific knowledge and innovation from research to industry. This high-level technological research is carried out in particular in electronic and integrated systems, from microscale to nanoscale. It has a wide range of industrial applications in the fields of transport, health, safety and telecommunications, contributing to the creation of high-quality and competitive products.

For more information: www.cea.fr/english 

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