KAWASAKI, Japan — (BUSINESS WIRE) — August 30, 2023 — Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the "TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest^[1] 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

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Toshiba: 3rd generation SiC MOSFETs for industrial equipment with four-pin package that reduces switching loss. (Graphic: Business Wire)

The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%^[2], compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

A reference design for a three-phase inverter using SiC MOSFETs is published online.

Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.

Notes:
[1] As of August 2023.
[2] As of August 2023, values measured by Toshiba (test condition: V_DD=800V, V_GG=+18V/0V, I_D=20A, R_G=4.7Ω, L=100μH, T_a=25°C)

Applications

• Switching power supplies (servers, data centers, communications equipment, etc.)
• EV charging stations
• Photovoltaic inverters
• Uninterruptible power supplies (UPS)

Features

• Four-pins TO-247-4L(X) package:
  Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive
• 3rd generation SiC MOSFETs
• Low drain-source On-resistance x gate-drain charge
• Low diode forward voltage: V_DSF=-1.35V (typ.) (V_GS=-5V)

Main Specifications