December 05, 2019 -- Weebit Nano (ASX: WBT), the Australia-listed next-generation memory technology for the global semiconductor industry, and its development partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, have filed three new patents for Weebit’s Silicon Oxide (SiOx) ReRAM technology.
The latest patents from Weebit and Leti use newly developed smart algorithms to increase the reliability and yield of ReRAM memory cells and enable scalable immune ReRAM process improvements. Two patents identify failure modes, in which optimised smart programming algorithms then improve the window margin and array yield. The third patent improves process flows, allowing increased stability at scaled memory cells in geometries of 40nm and below.
These patents outline methods to overcome issues that stem from physical limitations, which are common in advanced geometries approaching atomic-level limitations, resulting in increased yield and ultimately revenues per wafer.
Coby Hanoch, CEO of Weebit Nano, said: “Developing disruptive technology for productisation is not only a result of great material science engineering, but also understanding and controlling the physics of the device. A company needs to develop sophisticated process flow techniques as well as smart algorithms to overcome challenges and control the physics of the manufacturing environment. Weebit and Leti invest on both fronts to create unique know-how that will enable simpler and lower-cost manufacturability, resulting in highly reliable and cost-effective ReRAM memory solutions.
“These patents further fortify Weebit’s intellectual property and create a unique package of process and memory control that will be incorporated in our future products, enabling us to increase the potential revenues from each wafer produced,” said Mr Hanoch.
These most recent patent filings come after Weebit and Leti filed two prior patents in June relating to methods for optimising the performance of ReRAM memory cells by adjusting the manufacturability based on electrical measurements. One patent outlined a general methodology used to achieve the highest electrical performance of ReRAM cells while the other was the specification of that methodology.
The organisations also extended their partnership earlier in the year to combine Leti’s development of state-of-the-art technologies and architectures related to artificial intelligence with Weebit’s SiOx ReRAM to build an advanced neuromorphic demo system. Showcased at Flash Memory Summit 2019 in August, the system ran inference tasks using Spiking Neural Network (SNN) algorithms for implementing synapses. It showcased the capabilities of the technology by performing precise object recognition tasks in an energy-efficient manner. Unlike AI circuits which use standard processors and are implemented via software algorithms trying to simulate the synapse function, the demo used a hardware topology which looks and functions very much like the neurons and synapses in the brain.
Weebit Nano continues to refine its ReRAM technology in partnership with Leti, in order to ensure it is highly attractive to potential customers. The company remains on track to transfer its technology to a production fab by December 2020, and is continuing developments with potential customers.
