Toshiba Electronic Devices & Storage Corporation Releases 100V N-Channel Power MOSFETs for Industrial Applications with the Industry's Lowest-in-Class On-Resistance

Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series

TOKYO — (BUSINESS WIRE) — December 18, 2017Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

This press release features multimedia. View the full release here: http://www.businesswire.com/news/home/20171218005375/en/

Toshiba Electronic Devices & Storage Corporation:100V N-channel power MOSFETs "TPH3R70APL" for indus ...

Toshiba Electronic Devices & Storage Corporation:100V N-channel power MOSFETs "TPH3R70APL" for industrial applications. (Photo: Business Wire)

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “RDS(ON) × Qoss”, On-resistance times output charge, and “RDS(ON) × QSW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications[2].

Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.

Applications

- Power supplies for industrial equipment
- Motor control equipment

Features

- Industry’s lowest-in-class On-resistance[1]
RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
- Low output charge and low gate switch charge
- Allows 4.5V logic level drive

 

Main Specifications

 

 (Unless otherwise specified, @Ta=25°C)

Part

number

  Absolute

maximum ratings

  Drain-source

On-resistance

RDS(ON) max

(mΩ)

 

Total

gate

charge

Qg
typ.

(nC)

 

Gate
switch
charge

Q sw
typ.
(nC)

 

 

Output
charge
Q oss
typ.

(nC)

 

Input

capacitance
C iss
typ.

(pF)

  Package

Drain-

source

voltage
V DSS (V)

 

Drain

current
(DC)
I D
@T c =
25℃
(A)

@V
GS =
10V

 

@V
GS =
4.5V

TPH3R70APL 100 90 3.7 6.2 67 21 74 4850

SOP
Advance

TPN1200APL     40   11.5   20   24   7.5   24   1425  

TSON
Advance

 

1 | 2  Next Page »
Featured Video
Jobs
Principal Engineer for Autodesk at San Francisco, California
Senior Principal Software Engineer for Autodesk at San Francisco, California
Machine Learning Engineer 3D Geometry/ Multi-Modal for Autodesk at San Francisco, California
Mechanical Engineer 3 for Lam Research at Fremont, California
Equipment Engineer, Raxium for Google at Fremont, California
Senior Principal Mechanical Engineer for General Dynamics Mission Systems at Canonsburg, Pennsylvania
Upcoming Events
Greenbuild 2024 at Pennsylvania Convention Center Philadelphia PA - Nov 12 - 15, 2024
Digital Construction North (DCN) 2024 at Manchester Central. Manchester United Kingdom - Nov 13, 2024
Digital Twins 2024 at the Gaylord National Resort & Convention Center in, MD. National Harbor MD - Dec 9 - 11, 2024
Commercial UAV Expo 2025 at RAI Amsterdam Amsterdam Netherlands - Apr 8 - 11, 2025



© 2024 Internet Business Systems, Inc.
670 Aberdeen Way, Milpitas, CA 95035
+1 (408) 882-6554 — Contact Us, or visit our other sites:
TechJobsCafe - Technical Jobs and Resumes EDACafe - Electronic Design Automation GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise