FREMONT, Calif., June 15, 2017 (GLOBE NEWSWIRE) -- MicroWave Technology, Inc. (MwT), a division of IXYS Corporation (NASDAQ: IXYS), announced the release of its advanced GaAs/AlGaAs pHEMT-based Ka-band Monolithic Microwave Integrated Circuit (MMIC) high power amplifier product. The product is used by a major wireless communication equipment manufacturer for high data rate links for 4G/5G wireless infrastructure applications.
The Ka-band MMIC power amplifier, MMA-273336-M5, is a standard MMIC product available in volume production. The power amplifier operates between 27 and 33 GHz, providing 35 dBm (over 3W) of output power at a 1dB gain compression point and exceptional 36 dBm (4W) of output power at a 3 dB gain compression point. The typical small signal gain is 22 dB across the band. The IM3 level is –40 dBc at 20 dBm output power per tune. The DC bias conditions for this MMIC power amplifier are 6 volts and 2.8 amperes on the drain and –0.9 volt on the gate.
“I am pleased that our advanced Ka-band MMIC high power amplifier has been used in production quantities for high data rate links for 4G/5G infrastructure applications,” commented Dr. Greg Zhou, General Manager of MwT. “The state-of-the-art power and efficiency performance of the MMIC high power amplifier clearly demonstrates our superior technical and product capabilities for MMIC products up to the mm-wave frequency range. The applications of this MMIC high power amplifier include 4G/5G wireless infrastructure, very small aperture terminal (VSAT) transmitters, and point-to-point (PtP) microwave links for high data rate communications, as well as military and space applications. The exceptional power level from the MMA-273336-M5 exceeds the output power specification demanded by today’s emerging Ka-band (30 GHz) high data rate applications.”
The MMA-273336-M5 is fully matched for both input and output terminals for easy cascade and is packaged in the low cost M5 (5mm x 5mm) surface mount package with excellent thermal characteristics. The mean time before failure (MTBF) for this high power amplifiers is over 100 years at 85 degrees C ambient temperature. Evaluation boards for this and other power amplifiers are available now. For detailed datasheets and evaluation boards, please visit the MwT’s website at www.mwtinc.com. Contact MwT Sales at info@mwtinc.com or call (510) 651-6700 for sample requests and price quotes.
About MicroWave Technology Inc.
MwT is a leading manufacturer of radio frequency (RF) and microwave frequency discrete semiconductor products, advanced MMIC’s, hybrid modules, and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial, and medical applications. MwT houses one of four IXYS fab facilities, offering a factory specializing in GaAs based semiconductor devices, MMIC’s, and hybrid microwave integrated circuitry (HMIC) products.
About IXYS Corporation
IXYS Corporation makes and markets technology-driven products to improve power conversion efficiency, generate solar and wind power, and provide efficient motor control for industrial applications. IXYS offers a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, electronic displays and RF power.
Safe Harbor Statement
Any statements contained in this press release that are not statements of historical fact, including the performance, features and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Form 10-K for the fiscal year ended March 31, 2017. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.
Contact: Don Apte MwT Sales (510) 651-6700 info@mwtinc.com
