In addition, 14 Samsung Electronics breakout presentations to discuss memory advances for expanding consumer, data center and enterprise marketplaces
SAN JOSE, Calif. — (BUSINESS WIRE) — July 27, 2016 — At Flash Memory Summit 2016, Samsung will discuss the latest 3D V-NAND solutions aimed at meeting the growing requirements of big data networks, cloud computing and other means of real-time analysis. The remarks will be delivered during a keynote at 11:30 a.m. on Wednesday, August 10th in the Mission City Ballroom, Santa Clara (CA) Convention Center.
The keynote entitled “3D NAND is the Leadership Technology for Server Storage,” is being presented by Jaeheon Jeong, Executive Vice President, Solution Product R&D, Memory Business at Samsung Electronics and Jim Elliott, Corporate Vice President, Memory Marketing at Samsung Semiconductor, Inc.
“We are stretching the limits of storage technology in a digital world fixated by the constant push to make data more accessible, relevant and usable,” said co-presenter Elliott. “All of us need to better understand how we will optimize the efficiency with which we package and share data as the world’s new currency, not only within our infrastructure but also throughout the industries that it serves.”
In the keynote, Samsung will highlight milestones that have been achieved and are being achieved with solid state drives, especially through the use of 3D V-NAND, as well as underscore the increasing popularity of 3-bit MLC and NVMe technologies. The executives will further discuss higher capacity storage with advanced performance characteristics for workstation and server workloads, to meet the ever-increasing needs of public and private clouds, as well as virtual networks and mega-websites.
Samsung memory experts will also be featured in the following 14 breakout and forum sessions:
Tuesday, August 9
-
The Next UFS Disruptions in Mobile (Session Timeframe: 8:30 - 9:35 AM)
David Ghodsizadeh, Mobile Storage Product Marketing -
Delivering on NoSQL Database Performance Requirements with NVMe SSDs
(Session Timeframe: 8:30 - 10:50 AM)
Vijay Balakrishnan, Memory Solutions Lab Group Leader -
Why NVMe Will Replace SATA SSDs in the Data Center (Session Timeframe:
8:30 - 10:50 AM)
Michael Smullen, SSD Product Marketing Manager -
How Accelerating SSD Capacities will Revolutionize Enterprise Storage
(Session Timeframe: 8:30 - 10:50 AM)
Anders Graham, SSD Product Marketing Manager -
Flash Storage, Film Production in the Cloud (Session Timeframe: 9:45 -
10:50 AM)
Tien Shiah, SSD Product Marketing Manager -
Storage Intelligence: Increasing SSD Performance and Lifespan with
Multi-stream Technology (Session Timeframe: 3:20 - 5:45PM)
Changho Choi, Memory Solutions Lab Principal Engineer -
Standards for Improving SSD Performance and Endurance (Session
Timeframe: 3:20 - 5:45 PM)
Bill Martin, Memory Solutions Lab Principal Engineer
Wednesday, August 10
-
Ceph Meets NVMe – All-flash Ceph! (Session Timeframe: 8:30 - 10:50AM)
Gunna Marripudi, Memory Solutions Lab Principal Engineer & Brent Compton, Director Storage, Red Hat -
Taking Multiple PCIe SSDs and NVMe to Performance Extremes (Session
Timeframe: 8:30 - 10:50AM)
Richard Leonarz, Senior Marketing Manager -
NVMe of Storage Volumes for Containers (Session Timeframe: 3:50 -
4:55PM)
Gunna Marripudi, Memory Solutions Lab Principal Engineer & Anu Suhas, Sr Staff Storage Architect -
3D NAND SSDs Meet Low-Latency Requirements (Session Timeframe: 3:50 -
6:15PM)
Tien Shiah, SSD Product Marketing Manager -
NVMe Performance– Local vs. Remote Performance Studies (Session
Timeframe: 3:50 - 6:15PM)
Gunna Marripudi, Memory Solutions Lab Principal Engineer, Oscar Pinto, Memory Solutions Lab Engineer & Ming Lin, Memory Solutions Lab Engineer -
The Frontier for 3D NAND Flash Technology (Session Timeframe: 3:50 –
6:15PM)
Kristian Vatto, Technical Marketing Specialist
Thursday, Aug. 11
-
Unshackling PCIe SSDs Using NVMe (Session Timeframe: 2:30 – 3:45PM)
Bhagirath Patel, Storage Product Marketing
About Samsung Electronics Co., Ltd.
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