NORWOOD, Mass. — (BUSINESS WIRE) — May 20, 2015 — Analog Devices, Inc. (ADI) today introduced an absorptive single-pole, double-throw (SPDT) switch specified for the 9-KHz to 13-GHz frequency band, with high isolation of 48 dB and low insertion-loss of 0.6 dB at 8-GHz operation. The HMC1118LP3DE is the first offering within ADI’s new RF and microwave control product portfolio to exhibit the inherent advantages of silicon process technology, which offers critical advantages over legacy GaAs (gallium-arsenide) RF switches. These advantages include a settling time that is one hundred times faster than GaAs, robust ESD (electro-static discharge) protection (2000 V vs. 250 V compared to GaAs), and the ability to extend the switch’s low frequency-end one thousand times lower than GaAs while maintaining high linearity.

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The HMC1118LP3DE also offers industry-leading RF power handling of 4 W in through and 0.5 W in hot-switching operating modes. Hot-switching power handling is more than two times better than competitive parts with similar RF bandwidth, which allows engineers to increase allowed RF power in their applications and systems without the risk of damage to the part. The HMC1118LP3DE is optimized for high-isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13 GHz, while maintaining high signal fidelity down to 9 kHz. The combination of features suits the switch for demanding test and measurement, automated test equipment, defense electronics, and wireless communication applications as a lower cost alternative to legacy GaAs switches.

• View product page and download data sheet: http://www.analog.com/hmc1118
• Connect with engineers and ADI product experts on EngineerZone®, an online technical support community: https://ez.analog.com/community/hittite-microwave-and-analog-devices-support-collaboration-group

HMC1118LP3DE SPDT Switch Key Features

• Non-reflective 50-ohm design
• Positive control : 0/+3.3 V
• Low insertion loss: 0.68 dB at 8 GHz
• High isolation: 50 dB at 8 GHz
• Low-cut off frequency of 9 KHz
• Fast settling time of 7.5 usec for 0.05-dB of final RF output level
• Industry-leading high-power handling:
  • 35.5-dBm through path
  • 27-dBm terminated path and hot-switching case
• High linearity:
  • P1dB: +37 dBm typical
  • IIP3: +61 dBm typical
• ESD rating: 2-KV HBM

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